Manufacturer Part #
Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3
|Mfr. Name:||ON Semiconductor|
|Standard Pkg:|| |
Product Variant Information section
|Drain-to-Source Voltage [Vdss]:||30V|
|Drain-Source On Resistance-Max:||125mΩ|
|Rated Power Dissipation:||0.46|W|
|Qg Gate Charge:||4nC|
|Mounting Method:||Surface Mount|
Features & Applications
The FDN358P is a 30 V 125 mΩ Single P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance.
- -1.5 A, -30 V
- RDS(ON) = 125 mΩ @ VGS = 10 V
- RDS(ON) = 200 mΩ @ VGS = 4.5 V.
- Low gate charge (4 nC typical)
- High performance trench technology for extremely low RDS(ON).
- High power version of industry Standard SOT-23 package.
- Portable electronics applications
- Load switching and power management
- Battery charging circuits
- DC/DC conversion
$7.00 reeling fee is amortized over the number of components for each reel.
Mini-Reels are a custom product and are non-cancelable and non-returnable.