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Manufacturer Part #

FDN358P

Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 0.46|W
Qg Gate Charge: 4nC
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN358P is a 30 V 125 mΩ Single  P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance.

Features:

  • -1.5 A, -30 V
  • RDS(ON) = 125 mΩ @ VGS = 10 V
  • RDS(ON) = 200 mΩ @ VGS = 4.5 V.
  • Low gate charge (4 nC typical)
  • High performance trench technology for extremely low RDS(ON).
  • High power version of industry Standard SOT-23 package.

Applications:

  • Portable electronics applications
  • Load switching and power management
  • Battery charging circuits
  • DC/DC conversion
Pricing Section
Stock:
54,000
Minimum Order:
3,000
Multiple Of:
3,000
114,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$292.50
USD
Quantity
Web Price
3,000
$0.0975
9,000
$0.0811
15,000
$0.0802
30,000
$0.0791
60,000+
$0.078