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Manufacturer Part #

FDN5618P

P-Channel 60 V 0.170 Ohm Logic Level PowerTrench Mosfet SSOT-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.17Ω
Rated Power Dissipation: 0.46|W
Qg Gate Charge: 8.6nC
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN5618P is 60 V 0.170 Ω  P-Channel MOSFET uses high voltage PowerTrench process. It has been optimized for power management applications

Features:

  • –1.25 A, –60 V. RDS(ON) = 0.200 Ω @ VGS = –10 V, RDS(ON) = 0.230 Ω @ VGS = –4.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)

Applications:

  • DC-DC converters
  • Load switch
  • Power management
Pricing Section
Stock:
907,822
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.16
USD
Quantity
Web Price
1
$0.157
50
$0.125
100
$0.12
500
$0.109
1,500+
$0.102