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Manufacturer Part #

FDP047N10

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2032
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.7mΩ
Rated Power Dissipation: 375|W
Qg Gate Charge: 210nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FDP047N10 is an N-Channel MOSFET and has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • RDS(on) = 3.9 mΩ ( Typ.) @ VGS = 10V, ID = 75 A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handing capability
  • RoHS compliant

Applications:

  • DC to DC converters
  • Synchronous Rectification
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,400.00
USD
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
50
$2.40
2,000+
$1.92
Product Variant Information section