text.skipToContent text.skipToNavigation

Manufacturer Part #

FDP26N40

N-Channel 400 V 160 mOhm Flange Mount Mosfet - TO-220

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 400V
Drain-Source On Resistance-Max: 160mΩ
Rated Power Dissipation: 265|W
Qg Gate Charge: 60nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FDP26N40 N-Channel enhancement mode power field effect transistors are produced using DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction

Features:

  • RDS(on) = 0.13 Ω ( Typ.)@ VGS = 10 V, ID = 13 A
  • Low gate charge ( Typ. 48 nC)
  • Low Crss ( Typ. 30 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1.48
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1
$1.48
40
$1.32
150
$1.27
400
$1.23
1,500+
$1.18
Product Variant Information section