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Manufacturer Part #

FDPF18N50

N-Channel 500 V 0.265 Ω Through Hole Mosfet TO-220F

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2003
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 265mΩ
Rated Power Dissipation: 38.5|W
Qg Gate Charge: 60nC
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Flange Mount
Features & Applications

The FDPF18N50 is a 500 V 0.265 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. 

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 18 A, 500 V, RDS(on) = 0.265 Ω @VGS = 10 V
  • Low gate charge ( typical 45 nC)
  • Low Crss ( typical 25 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficent S.M.P.S
  • Active power factor correction
Pricing Section
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Total
$1.42
USD
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Quantity
Web Price
1+
$1.42
Product Variant Information section