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Manufacturer Part #

FDPF3860T

N-Channel 100 V 38.2 mOhm PowerTrench Mosfet TO-220F

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2048
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 38.2mΩ
Rated Power Dissipation: 33.8|W
Qg Gate Charge: 35nC
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Flange Mount
Features & Applications

The FDPF3860T is a 100 V 38.2 mΩ N-Channel MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • RDS(on) = 38.2 mΩ ( MAX ) @ VGS = 10 V, ID = 5.9 A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS compliant

Applications:

  • LCD TV
  • LED TV
  • Lighting
  • PDP TV
Pricing Section
Stock:
2,000
Minimum Order:
1,000
Multiple Of:
1,000
32,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$520.00
USD
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Quantity
Web Price
50
$0.52
2,000
$0.495
3,000
$0.47
4,000
$0.445
5,000+
$0.425
Product Variant Information section