text.skipToContent text.skipToNavigation

Manufacturer Part #

FDS3890

N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2031
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 44mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4.7A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 26ns
Rise Time: 8ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.3V
Technology: PowerTrench
Input Capacitance: 1180pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS3890 is a 80 V 44 mΩ Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features:

  • 4.7 A, 80 V
  • RDS(on) = 44 mΩ@ VGS = 10 V
  • RDS(on) = 50 mΩ @ VGS = 6 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • Consumer Appliances
  • Home Audio System Components
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Stock:
7,500
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,725.00
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
2,500
$0.69
5,000
$0.555
7,500+
$0.55