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Manufacturer Part #

FDS4435BZ

P-Channel 30 V 20 mΩ Surface Mount PowerTrench Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 28nC
Package Style:  SOIC-8
Features & Applications

The FDS4435BZ is a 20 mOhm and 30 V P-channel powertrench MOSFET. It is available in surface mount SOIC-8 package.

This P-Channel MOSFET is produced using semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features:

  • Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A
  • Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A
  • Extended VGSS range (–25V) for battery applications
  • HBM ESD protection level of ±3.8KV typical
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • Termination is Lead–free and RoHS compliant
Pricing Section
Stock:
110,871
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.30
USD
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Quantity
Web Price
1
$0.30
50
$0.25
100
$0.24
250
$0.23
500+
$0.225