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Manufacturer Part #

FDS4465

P-Channel 20 V 8.5 mOhm 1.8V Specified PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 8.5mΩ
Rated Power Dissipation: 1.2|W
Qg Gate Charge: 120nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS4465 is a 20 V 8.5 mΩ P-Channel 1.8 V specified MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V – 8 V)

Features:

  • -13.5 A, -20 V.
  • RDS(on) = 8.5 mΩ @ VGS = - 4.5 V
  • RDS(on) = 10.5 mΩ @ VGS = - 2.5 V
  • RDS(on) = 14 mΩ @ VGS = - 1.8 V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High current and power handling capability 

Applications:

  • Power management
  • Load switch
  • Battery protection
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
1
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1.18
USD
Quantity
Web Price
1
$1.18
50
$0.865
100
$0.82
250
$0.765
500+
$0.725
Product Variant Information section