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Manufacturer Part #
FDS4897C
FDS4897C Series 40 V 29 mOhm Dual N & P-Channel PowerTrench Mosfet SOIC-8
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| Mfr. Name: | ON Semiconductor | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1730 | ||||||||||
Product Specification Section
Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Product Lifecycle:
Active
Technical Attributes
Attributes Table
| Fet Type: | Dual N/P-Ch |
| Drain-to-Source Voltage [Vdss]: | 40V/-40V |
| Drain-Source On Resistance-Max: | 29mΩ/46mΩ |
| Rated Power Dissipation: | 0.9|W |
| Qg Gate Charge: | 1420nC |
| Turn-on Delay Time: | 22ns |
| Turn-off Delay Time: | 72ns |
| Rise Time: | 27ns |
| Fall Time: | 32ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 760pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Features & Applications
The FDS4897C is a 40 V 29 mΩ dual N & P-Channel enhancement mode power field effect transistors are produced using advanced PowerTrench process.
This device is especially tailored to minimize on-state resistance and yet maintain superior switching performance
Features:
- Q1: N-Channel 6.2 A, 40 V
- RDS(ON) = 29 mΩ @ VGS = 10 V
- RDS(ON) = 36 mΩ @ VGS = 4.5 V
- Q2: P-Channel -4.4 A,-40 V
- RDS(ON) = 46 mΩ @ VGS = -10 V
- RDS(ON) = 63 mΩ @ VGS = -4.5 V
- High power and handling capability in a widely used surface mount package
- RoHS compliant
Applications:
Pricing Section
Stock:
22,500
Minimum Order:
2,500
Multiple Of:
2,500
Factory Lead Time:
N/A
Quantity
Web Price
2,500
$0.32
5,000
$0.305
7,500
$0.29
10,000
$0.275
12,500+
$0.26
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount
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