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Manufacturer Part #

FDS4897C

FDS4897C Series 40 V 29 mOhm Dual N & P-Channel PowerTrench Mosfet SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 40V/-40V
Drain-Source On Resistance-Max: 29mΩ/46mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 1420nC
Turn-on Delay Time: 22ns
Turn-off Delay Time: 72ns
Rise Time: 27ns
Fall Time: 32ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 760pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS4897C is a 40 V 29 mΩ dual N & P-Channel enhancement mode power field effect transistors are produced using advanced PowerTrench process.

This device is  especially tailored to minimize on-state resistance and yet maintain superior switching performance

Features:

  • Q1: N-Channel 6.2 A, 40 V
  • RDS(ON) = 29 mΩ @ VGS = 10 V
  • RDS(ON) = 36 mΩ @ VGS = 4.5 V
  • Q2: P-Channel -4.4 A,-40 V
  • RDS(ON) = 46 mΩ @ VGS = -10 V
  • RDS(ON) = 63 mΩ @ VGS = -4.5 V
  • High power and handling capability in a widely used surface mount package
  • RoHS compliant

Applications:

  • Inverter
  • Power Supplies
Pricing Section
Stock:
22,500
Minimum Order:
2,500
Multiple Of:
2,500
100,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$800.00
USD
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Quantity
Web Price
2,500
$0.32
5,000
$0.305
7,500
$0.29
10,000
$0.275
12,500+
$0.26