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Manufacturer Part #

FDS4935A

Dual P-Channel 30 V 23 mOhm SMT PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2030
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 15nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS4935A is a 30 V 23 mΩ Dual P-Channel MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V).

Features:

  • -7 A, -30 V
  • RDS(ON) = 23 mΩ @ VGS = -10 V
  • RDS(ON) = 35 mΩ @ VGS = -4.5 V
  • Low gate charge (15nC typical)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Applications:

  • Inverter
  • Power Supplies
Pricing Section
Global Stock:
35,000
USA:
35,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
50 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1.21
USD
Quantity
Web Price
1
$1.21
50
$0.925
100
$0.88
250
$0.825
500+
$0.79