text.skipToContent text.skipToNavigation

Manufacturer Part #

FDS4935BZ

Dual P-Channel 30 V 1.6 W 40 nC Silicon Surface Mount Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 1.6W
Qg Gate Charge: 40nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 6.9A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 68ns
Rise Time: 23ns
Fall Time: 61ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 1360pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS4935BZ 30 V 22 mΩ Dual P-Channel MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V).

Features:

  • -7 A, -30 V
  • RDS(ON) = 23 mΩ @ VGS = -10 V
  • RDS(ON) = 35 mΩ @ VGS = -4.5 V
  • Low gate charge (15nC typical)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Applications:

  • Inverter
  • Power Supplies
Pricing Section
Stock:
7,683
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.73
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1
$0.73
50
$0.56
100
$0.53
250
$0.50
500+
$0.475