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Manufacturer Part #

FDS6570A

Single N-Channel 20 V 7.5 mOhm 2.5V PowerTrench Mosfet SOIC-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 7.5mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 47nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6570A is a 20 V 7.5 mΩ N-Channel 2.5 V specified MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance

Features:

  • 15 A, 20 V
  • RDS(on) = 0.0075 Ω @ VGS = 4.5 V, RDS(on) = 0.010 Ω @ VGS = 2.5 V
  • Low gate charge ( 47nC typical )
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • DC/DC converter
  • Load switch
  • Battery protection
Pricing Section
Stock:
0
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,237.50
USD
Quantity
Web Price
2,500
$0.895
5,000+
$0.715
Product Variant Information section