text.skipToContent text.skipToNavigation

Manufacturer Part #

FDS6574A

N-Channel 20 V 6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1945
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 6mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 105nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6574A is a 20 V 6 mΩ N-Channel 2.5 V specified MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance

Features:

  • 15 A, 20 V
  • RDS(on) = 0.0075 Ω @ VGS = 4.5 V, RDS(on) = 0.010 Ω @ VGS = 2.5 V
  • Low gate charge ( 47nC typical )
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • DC/DC converter
  • Load switch
  • Battery protection
Pricing Section
Stock:
55,000
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,387.50
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
2,500+
$0.555
Product Variant Information section