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Manufacturer Part #

FDS6576

P-Channel 20 V 14 mOhm 2.5V Specified PowerTrench® MOSFET-SOIC-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 14mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 43nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6576 is a P-Channel 2.5 V specified MOSFET that has been optimized for power management applications with a wide range of gate drive voltage (2.5 V - 12 V).

Features:

  • –11 A, –20 V
    • RDS(ON) = 0.014 Ω @ VGS = –4.5 V
    • RDS(ON) = 0.020 Ω @ VGS = –2.5 V
  • Extended VGSS range (±12 V) for battery applications
  • Low gate charge (43 nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • RoHS Compliant

Applications:

  • Load switch
  • Battery protection
  • Power management
Pricing Section
Stock:
0
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,262.50
USD
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Quantity
Web Price
2,500
$0.505
5,000
$0.48
7,500
$0.46
10,000+
$0.435
Product Variant Information section