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Manufacturer Part #

FDS6675BZ

P-Channel 30 V 21.8 mOhm 2.5 W Power Trench Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 21.8mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 44nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6675BZ 30 V 7.8 mΩ is a P-Channel MOSFET is producted using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

Features:

  • Max rDS(on) = 13 mΩ at VGS = -10 V, ID = -11 A
  • Max rDS(on) = 21.8 mΩ at VGS = -4.5 V, ID = -9 A
  • Extended VGS range (-25 V) for battery applications
  • HBM ESD protection level of 5.4 KV typical (note 3)
  • High performance trench technology for extremely lowrDS(on)
  • High power and current handing capability
  • RoHS Compliant 

Applications:

  • Automation
  • Power Management
  • Load switching applications
  • Notebook Computers 
  • Portable Battery Packs
Pricing Section
Stock:
112,500
Minimum Order:
2,500
Multiple Of:
2,500
160,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$575.00
USD
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Quantity
Web Price
2,500
$0.23
5,000
$0.188
7,500
$0.186
10,000
$0.185
12,500+
$0.184