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Manufacturer Part #

FDS6680A

N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 9.5mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12.5A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 43ns
Rise Time: 10ns
Fall Time: 27ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: PowerTrench
Input Capacitance: 1620F
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6680A is a 30 V 9.5 mΩ N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features:

  • 12.5 A, 30 V
  • RDS(ON) = 9.5 mΩ @ VGS = 10 V
  • RDS(ON) = 13 mΩ @ VGS = 4.5 V
  • Ultra-low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • Low voltage
  • Battery powered applications
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Stock:
97,500
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.56
USD
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Quantity
Web Price
1
$0.555
50
$0.425
100
$0.405
250
$0.38
500+
$0.36