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Manufacturer Part #

FDS6690AS

N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2025
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 16nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6690AS is a 30 V 12 mΩ N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features:

  • 11 A, 30 V
  • RDS(ON) = 12.5 mΩ @ VGS = 10 V
  • RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability 

Applications:

  • Low voltage
  • Battery powered applications
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Stock:
2,500
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$937.50
USD
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Quantity
Web Price
2,500
$0.375
5,000
$0.355
7,500
$0.335
10,000+
$0.32
Product Variant Information section