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Manufacturer Part #

FDS6875

Dual P-Channel 20 V 30 mOhm PowerTrench Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.03Ω
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 31nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6875 is a 20 V 30 mΩ  P-Channel 2.5 V specified MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.  

Features:

  • -6 A, -20 V.
  • RDS(ON) = 0.030 Ω @ VGS = -4.5 V,
  • RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
  • Low gate charge (23nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

Applications:

  • Portable electronics
  • Load switching
  • Power management,
  • Battery charging
  • Protection circuits.
  • Notebook Vcore low side switch
  • Point of Load low side switch
Pricing Section
Stock:
12,500
Minimum Order:
2,500
Multiple Of:
2,500
75,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,137.50
USD
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Quantity
Web Price
2,500
$0.455
5,000
$0.37
7,500+
$0.365