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Manufacturer Part #

FDS6890A

Dual N-Channel 20 V 18 mOhm SMT PowerTrench Mosfet - SOIC-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2002
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.18Ω
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 32nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6890A is a 20 V 18 mΩ Dual N-Channel 2.5 V specified MOSFETs are produced using  advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • 7.5 A, 20 V
  • RDS(ON) = 0.018 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.022 Ω @ VGS = 2.5 V
  • Low gate charge (23nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • DC/DC converter
  • Motor drives
Pricing Section
Stock:
0
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,700.00
USD
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Quantity
Web Price
2,500
$0.68
5,000
$0.55
7,500+
$0.545
Product Variant Information section