text.skipToContent text.skipToNavigation

Manufacturer Part #


Dual N-Channel 30 V 28 mOhm Logic Level PowerTrench Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 28mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 5.8nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6912A is a 30 V 28 mΩ N-Channel Logic Level MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance


  • 6 A, 30 V.
  • RDS(ON) = 28 mW @ VGS = 10 V
  • RDS(ON) = 35 mW @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability


  • Low voltage
  • Battery powered applications
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Web Price:
$0.58 USD Each
Cost Per Unit
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.

$7.00 reeling fee is amortized over the number of components for each reel.
Mini-Reels are a custom product and are non-cancelable and non-returnable.