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Manufacturer Part #

FDS6912A

Dual N-Channel 30 V 28 mOhm Logic Level PowerTrench Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 28mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 5.8nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6912A is a 30 V 28 mΩ N-Channel Logic Level MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • 6 A, 30 V.
  • RDS(ON) = 28 mW @ VGS = 10 V
  • RDS(ON) = 35 mW @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • Low voltage
  • Battery powered applications
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Stock:
55,000
Minimum Order:
2,500
Multiple Of:
2,500
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$625.00
USD
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Quantity
Web Price
2,500
$0.25
5,000
$0.24
7,500
$0.225
10,000
$0.215
12,500+
$0.205