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Manufacturer Part #

FDS8882

N-Channel 30 V 20 mΩ Surface Mount PowerTrench® Mosfet - SOIC-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 20nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS8882 is a 30 V 20 mΩ N-Channel mosfets has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features:

  • Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
  • Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
  • High performance trench technology
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant 

Applications:

  • Notebook System Regulators
  • DC/DC Converters
Pricing Section
Stock:
0
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$725.00
USD
Quantity
Web Price
2,500
$0.29
5,000
$0.275
7,500
$0.26
10,000
$0.245
12,500+
$0.235
Product Variant Information section