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Manufacturer Part #

FDS8958A

Dual N & P-Channel 30 V 0.028 Ohm Surface Mount PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2050
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-30V
Drain-Source On Resistance-Max: 28mΩ/52mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 11.4nC/9.6nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS8958A 30 V 0.028 Ω dual N- and P-Channel enhancement mode power field effect transistors are produced using advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance

Features:

  • Max rDS(on) = 29 mΩ at VGS = 10 V
  • Max rDS(on) = 36 mΩ at VGS = 4.5 V
  • Low gate charge
  • High performance trench technology for extremely lowrDS(on)
  • High power and current handling capability
  • RoHS compliant

Applications:

  • Low voltage and battery powered applications

View the complete family of N & P-channel mosfets

Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
50 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.85
USD
Quantity
Web Price
1
$0.845
50
$0.61
100
$0.575
250
$0.535
500+
$0.505