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Manufacturer Part #

FDS9926A

Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 9nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS9926A is a 20 V 30 mΩ 2.5 V Dual N-Channel  MOSFETs use advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 10 V).

Features:

  • 6.5 A, 20 V
  • RDS(ON) = 30 mΩ @ VGS = 4.5 V
  • RDS(ON) = 43 mΩ @ VGS = 2.5 V
  • Optimized for use in battery protection circuits
  • ±10 VGSS allows for wide operating voltage range
  • Low gate charge 

 Applications:

  • Power management
  • Load switch
  • Battery protection
Pricing Section
Stock:
15,754
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.44
USD
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Quantity
Web Price
1
$0.435
50
$0.33
100
$0.315
250
$0.295
500+
$0.28