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Manufacturer Part #

FDT3612

N-Channel 100 V 120 mOhm SMT PowerTrench Mosfet- SOT-223

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 1952
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 120mΩ
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 14nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Features & Applications

The FDT3612 is a 100 V 120 mΩ N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features:

  • 3.7 A, 100 V
  • RDS(on) = 120 mΩ@ VGS = 10 V
  • RDS(on) = 130 mΩ @ VGS = 6 V
  • Fast switching speed
  • Low gate charge (14nC typical)
  • High performance trench technology 
  • High power and current handling capability 

Applications:

  • Power management
  • Load switch
  • Battery protection
Pricing Section
Stock:
20,000
Minimum Order:
4,000
Multiple Of:
4,000
36,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$980.00
USD
Quantity
Web Price
4,000
$0.245
8,000
$0.199
12,000
$0.197
16,000+
$0.196