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Manufacturer Part #

FDU3N40TU

N-Channel 400 V 2 A 3400 mOhm Mosfet - IPAK

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 400V
Drain-Source On Resistance-Max: 3.4Ω
Rated Power Dissipation: 30|W
Qg Gate Charge: 6nC
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Features & Applications

FDU3N40TU N-Channel enhancement mode power field effect transistor is produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on–state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies and active power factor correction.

Features:

  • 2 A, 400 V, RDS(on) = 3.4 Ω @VGS = 10 V
  • Low gate charge ( typical 4.5 nC)
  • Low Crss ( typical 3.7 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
Pricing Section
Stock:
0
Minimum Order:
10,080
Multiple Of:
5,040
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,872.80
USD
Quantity
Web Price
5,040
$0.295
10,080
$0.285
15,120
$0.27
20,160+
$0.255
Product Variant Information section