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Manufacturer Part #

FQA13N50CF

N-Channel 500 V 480 mOhms Through Hole Mosfet - TO-3PN

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2026
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 480mΩ
Rated Power Dissipation: 218|W
Qg Gate Charge: 56nC
Package Style:  TO-3PN
Mounting Method: Through Hole
Features & Applications

The FQA13N50CF Series of 500 V 480 mOhm.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features:

  • 15 A, 500 V
    • RDS(on) = 0.048 W@ VGS = 10 V
  • Low gate charge (typical 43 nC)
  • Low Crss (typical 20 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Fast recovery body diode (typical 100 ns) 
Pricing Section
Stock:
0
Minimum Order:
450
Multiple Of:
450
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$711.00
USD
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Quantity
Web Price
450
$1.58
900
$1.29
1,350
$1.28
1,800
$1.27
2,250+
$1.26
Product Variant Information section