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Manufacturer Part #

FQB34N20LTM

FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2048
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 75mΩ
Rated Power Dissipation: 3.13|W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31A
Turn-on Delay Time: 45ns
Turn-off Delay Time: 170ns
Rise Time: 520ns
Fall Time: 370ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Height - Max: 4.83mm
Length: 10.67mm
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FQB34N20L is a 200 V 0.075 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

 Features:

  • 31 A, 200 V, RDS(on) = 0.075 Ω @VGS = 10 V
  • Low gate charge ( typical 55 nC)
  • Low Crss ( typical 52 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Low level gate drive requirement allowing direct operation from logic drivers
  • RoHS Compliant

 Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply,
  • Motor control
  • Audio amplifier
Pricing Section
Global Stock:
19,200
Germany (Online Only):
19,200
119,200
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$992.00
USD
Quantity
Web Price
800
$1.24
1,600
$1.01
2,400+
$0.995
Product Variant Information section