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Manufacturer Part #

FQD19N10TM

N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3

Mfr. Name: ON Semiconductor
Standard Pkg:
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Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.1Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 19nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD19N10TM is a 100 V 0.1 Ohm N-Channel enhancement mode power field effect transistor.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

Features:

  • 15.6 A, 100 V, R DS(on) = 0.1 Ω @V GS = 10 V
  • Low gate charge (typical 19 nC)
  • Low Crss (typical 32 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • Audio amplifier
  • DC/DC converters
  • DC motor control

 

Pricing Section
Stock:
0
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$900.00
USD
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Quantity
Web Price
2,500
$0.36
5,000
$0.345
7,500
$0.325
10,000+
$0.31
Product Variant Information section