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Manufacturer Part #

FQD1N80TM

N-Channel 800 V 20 Ohm Surface Mount Mosfet - TO-252-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2015
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 20Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 7.2nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD1N80TM is a 800 V 20 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 1.0 A, 800 V
  • RDS(on) = 20 Ω @VGS = 10 V
  • Low gate charge ( typical 5.5 nC)
  • Low Crss ( typical 2.7 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

 Applications:

  • Audio amplifier
  • High efficiency switching
  • DC/DC converters
  • DC motor control

 

 

Pricing Section
Stock:
0
Minimum Order:
2,500
Multiple Of:
2,500
17,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$612.50
USD
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Quantity
Web Price
2,500
$0.245
5,000
$0.235
7,500
$0.22
10,000+
$0.21