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Manufacturer Part #

FQP13N06L

N-Channel 60 V 0.11 Ohm Through Hole Logic Mosfet - TO-220

Mfr. Name: ON Semiconductor
Standard Pkg:
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Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 45|W
Qg Gate Charge: 6.4nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FQP13N06L is a 60 V 0.11 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • -5.4 A, -60 V,
  • RDS(on)= 0.45 Ω@VGS= -10 V
  • Low gate charge ( typical 6.3 nC)
  • Low Crss (typical 25 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • Low voltage applications
  • DC/DC converters
  • High efficiency switching power management
  • portable and battery operated products

 

 

Pricing Section
Stock:
0
Minimum Order:
2,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$780.00
USD
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Quantity
Web Price
1,000
$0.41
2,000
$0.39
4,000
$0.37
5,000+
$0.35
Product Variant Information section