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Manufacturer Part #

FQP27N25

Single N-Channel 250 V 180 W 65 nC DMOS Through Hole Mosfet - TO-220-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2001
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 180W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 25.5A
Turn-on Delay Time: 32ns
Turn-off Delay Time: 80ns
Rise Time: 270ns
Fall Time: 120ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 1900pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Total
$1,170.00
USD
Quantity
Web Price
50
$1.57
200
$1.22
500
$1.17
1,250
$1.11
2,000+
$1.09
Product Variant Information section