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Manufacturer Part #

FQP27P06

FQP27P06 Series -60 V -27 A 70 mOhm P-Channel QFET Mosfet - TO-220-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2031
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.07Ω
Rated Power Dissipation: 120|W
Qg Gate Charge: 33nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The FQP27P06 is a P-Channel enhancement mode power field effect transistor.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features:

  • -27 A, -60 V, RDS(on) = 0.07 Ω @VGS = -10 V
  • Low gate charge (typical 33 nC)
  • Low Crss (typical 120 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175 °C maximum junction temperature rating

Applications:

  • TBA  
Pricing Section
Stock:
547
Minimum Order:
1
Multiple Of:
1
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1.14
USD
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Quantity
Web Price
1
$1.14
75
$0.875
250
$0.815
1,000
$0.75
3,000+
$0.70
Product Variant Information section