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Manufacturer Part #

FQP47P06

P-Channel 60 V 26 mOhm Through Hole QFET Mosfet - TO-220

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1945
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.026Ω
Rated Power Dissipation: 160W
Qg Gate Charge: 84nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 47A
Turn-on Delay Time: 110ns
Turn-off Delay Time: 210ns
Rise Time: 910ns
Fall Time: 400ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Planar Technology
Input Capacitance: 3600pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FQP47P06 is a P-Channel enhancement mode power field effect transistor.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features:

  • 47 A, -60 V, RDS(on)= 0.026 Ω@VGS= -10V
  • Low gate charge (typical 84 nC)
  • Low Crss (typical 320 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175ºC maximum junction temperature rating

Applications:

 

Pricing Section
Stock:
18,335
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1.44
USD
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Product Variant Information section