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Manufacturer Part #

FQP50N06

N-Channel 60 V 0.022 Ohm Through Hole Mosfet - TO-220

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2009
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.022Ω
Rated Power Dissipation: 120|W
Qg Gate Charge: 41nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FQP50N06 is a  N-Channel enhancement mode power field effect transistor.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features:

  • 52.4 A, 60 V, RDS(on) = 0.021 Ω @VGS = 10 V
  • Low gate charge (typical 24.5 nC)
  • Low Crss (typical 90 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating

Applications:

  • TBA  
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
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6,469
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Total
$0.80
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Quantity
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1
$0.80
75
$0.71
250
$0.685
1,000
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3,000+
$0.64
Product Variant Information section