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Manufacturer Part #

FQP8N80C

N-Channel 800 V 8 A 1.55 Ohm Through Hole QFET® MOSFET - TO-220

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.55Ω
Rated Power Dissipation: 178W
Qg Gate Charge: 35nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 8A
Turn-on Delay Time: 40ns
Turn-off Delay Time: 65ns
Rise Time: 110ns
Fall Time: 70ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 1580pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,960.00
USD
Quantity
Web Price
1,000
$1.96
2,000
$1.59
3,000+
$1.57
Product Variant Information section