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Manufacturer Part #
FQT3P20TF
FQT3P20 Series -200 V -0.67 A 2.7 Ohm P-Channel QFET Mosfet - TO-220-3
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| Mfr. Name: | ON Semiconductor | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOT-223 (TO-261-4, SC-73) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1841 | ||||||||||
Product Specification Section
Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Product Lifecycle:
Active
Technical Attributes
Attributes Table
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 2.7Ω |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 6nC |
| Package Style: | SOT-223 (TO-261-4, SC-73) |
| Mounting Method: | Surface Mount |
Features & Applications
The FQT3P20TF is a 200 V 2.7 Ω N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode
Features:
- 3.9 A, 800 V, RDS(on) = 3.6 Ω @VGS = 10 V
- Low gate charge ( typical 19 nC)
- Low Crss ( typical 8.6 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications:
- Automotive
- DC/ DC converters
- Power management
- Battery operated products
Pricing Section
Stock:
0
Minimum Order:
4,000
Multiple Of:
4,000
On Order:
0
Factory Lead Time:
N/A
Quantity
Web Price
4,000
$0.225
8,000
$0.182
12,000
$0.18
16,000+
$0.179
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount
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