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Manufacturer Part #

FQT3P20TF

FQT3P20 Series -200 V -0.67 A 2.7 Ohm P-Channel QFET Mosfet - TO-220-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 1841
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 2.7Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 6nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Features & Applications

The FQT3P20TF is a 200 V 2.7 Ω N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

Features:

  • 3.9 A, 800 V, RDS(on) = 3.6 Ω @VGS = 10 V
  • Low gate charge ( typical 19 nC)
  • Low Crss ( typical 8.6 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • Automotive
  • DC/ DC converters
  • Power management
  • Battery operated products

 

 

Pricing Section
Stock:
0
Minimum Order:
4,000
Multiple Of:
4,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$900.00
USD
Quantity
Web Price
4,000
$0.225
8,000
$0.182
12,000
$0.18
16,000+
$0.179