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Manufacturer Part #

HUF75345S3ST

N-Channel 55 V 0.007 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1947
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.007Ω
Rated Power Dissipation: 325|W
Qg Gate Charge: 275nC
Package Style:  TO-263AB
Mounting Method: Surface Mount
Features & Applications
The HUF75345S3ST is a N-Channel power MOSFET and it is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. .

Features:

  • 75 A, 55 V
  • Simulation models
  • Temperature Compensated PSPICE® and SABER™ Models
  • Thermal Impedance SPICE and SABER Models Available on the Web
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature

Applications:

  • Switching regulators
  • Switching converters
  • Motor drivers
  • Relay drivers
  • Low-voltage bus switches
  • Power management
  • Battery-operated products
Pricing Section
Stock:
2,400
Minimum Order:
800
Multiple Of:
800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,128.00
USD
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Quantity
Web Price
800
$2.66
1,600+
$2.13
Product Variant Information section