text.skipToContent text.skipToNavigation

Manufacturer Part #

HUF75639S3ST

N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2003
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.025Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 110nC
Package Style:  TO-263AB
Mounting Method: Surface Mount
Features & Applications
The HUF75639S3ST is a N-Channel power MOSFET and is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge

Features:

  • 56 A, 100 V
  • Simulation models
  • Temperature Compensated PSPICE® and SABER™ Electrical Models
  • SPICE and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve

Applications:

  • Automotive
  • DC/ DC converters
  • Power management
  • Battery operated products
Pricing Section
Stock:
0
Minimum Order:
800
Multiple Of:
800
1,600
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$968.00
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
800
$1.21
1,600
$0.985
2,400
$0.975
3,200+
$0.965
Product Variant Information section