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Manufacturer Part #

HUF75645S3ST

N-Channel 100 V 0.014 Ohm UltraFET Power Mosfet - TO-263AB

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.014Ω
Rated Power Dissipation: 310|W
Qg Gate Charge: 198nC
Package Style:  TO-263AB
Mounting Method: Surface Mount
Features & Applications
The HUF75645S3ST is a N-Channel 100 V 0.014 Ohm UltraFET Power Mosfet.

Features:

  • Ultra Low On-Resistance
  • rDS(ON) = 0.014 Ω, VGS = 10 V
  • Simulation Models
  • Temperature Compensated PSPICE® and SABERTMElectrical Models
  • Spice and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve 

Applications:

  • TBA
Pricing Section
Stock:
0
Minimum Order:
800
Multiple Of:
800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,504.00
USD
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Quantity
Web Price
800
$1.88
1,600
$1.53
2,400
$1.51
3,200+
$1.50
Product Variant Information section