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Manufacturer Part #
IMW120R045M1XKSA1
IMW120 Series 1200V 59mOhm 52 nC N-Channel SiC CoolSiC™ Trench MOSFET - TO-247-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Flange Mount | ||||||||||
| Date Code: | |||||||||||
Infineon IMW120R045M1XKSA1 - Product Specification
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Infineon IMW120R045M1XKSA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 59mΩ |
| Rated Power Dissipation: | 228W |
| Qg Gate Charge: | 52nC |
| Gate-Source Voltage-Max [Vgss]: | 3.5V |
| Drain Current: | 52A |
| Turn-on Delay Time: | 9ns |
| Turn-off Delay Time: | 17ns |
| Rise Time: | 24ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4.5V |
| Technology: | SiC |
| Input Capacitance: | 1900pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Flange Mount |
$Features & Applications
Infineon Technologies has announced that it has begun volume production of discrete 1,200V CoolSiC™ MOSFET devices in a TO247 package, with on-resistance ratings ranging from 30mΩ to 350mΩ.
APPLICATIONS
• Solar inverters
• Battery charging infrastructure
• Energy storage solutions
• Uninterruptible power supplies
• Motor drives
• Data center and telecoms power supplies
FEATURES
• Low device capacitance
• Temperature-independent switching losses
• Integral diode with low reverse-recovery charge
• Threshold-free on-state characteristics
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Flange Mount