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Manufacturer Part #

IMW120R045M1XKSA1

IMW120 Series 1200V 59mOhm 52 nC N-Channel SiC CoolSiC™ Trench MOSFET - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
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Product Specification Section
Infineon IMW120R045M1XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 59mΩ
Rated Power Dissipation: 228W
Qg Gate Charge: 52nC
Gate-Source Voltage-Max [Vgss]: 3.5V
Drain Current: 52A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 17ns
Rise Time: 24ns
Fall Time: 13ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 1900pF
Package Style:  TO-247-3
Mounting Method: Flange Mount
$Features & Applications

Infineon Technologies has announced that it has begun volume production of discrete 1,200V CoolSiC™ MOSFET devices in a TO247 package, with on-resistance ratings ranging from 30mΩ to 350mΩ.

APPLICATIONS
• Solar inverters
• Battery charging infrastructure
• Energy storage solutions
• Uninterruptible power supplies
• Motor drives
• Data center and telecoms power supplies

FEATURES
• Low device capacitance
• Temperature-independent switching losses
• Integral diode with low reverse-recovery charge
• Threshold-free on-state characteristics

Pricing Section
Global Stock:
0
USA:
0
1,200
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$16.04
USD
Quantity
Web Price
1
$16.04
5
$16.04
25
$15.61
50
$15.51
150+
$15.37
Product Variant Information section