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Manufacturer Part #
IMZ120R030M1HXKSA1
IMZ Series 1200 V 30 mOhm 63 nC Through Hole Silicon Carbide Mosfet - TO-247-4
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:240 per Tube Package Style:TO-247-4 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2044 | ||||||||||
Product Specification Section
Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Product Lifecycle:
Active
Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 42mΩ |
| Rated Power Dissipation: | 227W |
| Qg Gate Charge: | 63nC |
| Gate-Source Voltage-Max [Vgss]: | 23V |
| Drain Current: | 56A |
| Turn-on Delay Time: | 7.7ns |
| Turn-off Delay Time: | 17.3ns |
| Rise Time: | 11.6ns |
| Fall Time: | 11.5ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4.5V |
| Technology: | SiC |
| Input Capacitance: | 2120pF |
| Package Style: | TO-247-4 |
| Mounting Method: | Through Hole |
Pricing Section
Stock:
0
Minimum Order:
240
Multiple Of:
240
On Order:
0
Factory Lead Time:
N/A
Quantity
Web Price
240+
$13.99
Product Variant Information section
Available Packaging
Package Qty:
240 per Tube
Package Style:
TO-247-4
Mounting Method:
Through Hole
