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Manufacturer Part #

IMZ120R090M1HXKSA1

IMZ Series 1200 V 90 mOhm 21 nC Through Hole Silicon Carbide Mosfet - TO-247-4

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1937
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 115W
Qg Gate Charge: 21nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 26A
Turn-on Delay Time: 5.4ns
Turn-off Delay Time: 11.5ns
Rise Time: 3ns
Fall Time: 11ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 707pF
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Stock:
240
Minimum Order:
30
Multiple Of:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$223.50
USD
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Quantity
Web Price
30+
$7.45
Product Variant Information section