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Manufacturer Part #

IMZA65R072M1HXKSA1

Single N-Channel 650 V 28 A 96 W CoolSiC™ Through Hole- Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2038
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 94mΩ
Rated Power Dissipation: 96W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 28A
Turn-on Delay Time: 15.2ns
Turn-off Delay Time: 21.6ns
Rise Time: 8.6ns
Fall Time: 5.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 744pF
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$403.50
USD
Quantity
Web Price
30
$13.45
60
$11.21
120
$10.87
150+
$10.76
Product Variant Information section