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Manufacturer Part #

IPA60R180P7XKSA1

Single N-Channel 600V 180 mOhm 25 nC CoolMOS™ Power Mosfet - TO-220-3FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPA60R180P7XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.18Ω
Rated Power Dissipation: 26W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 85ns
Rise Time: 12ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1081pF
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
500
Multiple Of:
50
Total
$980.00
USD
Quantity
Web Price
50
$1.96
1,000
$1.60
1,500
$1.58
2,000+
$1.57
Product Variant Information section