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Manufacturer Part #

IPA65R310CFDXKSA1

Single N-Channel 650 V 310 mOhm 41 nC CoolMOS™ Power Mosfet - TO-220-3-FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.31Ω
Rated Power Dissipation: 32W
Qg Gate Charge: 41nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11.4A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 45ns
Rise Time: 7.5ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 1100pF
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$164.00
USD
Quantity
Web Price
50
$3.28
1,000
$2.65
1,500+
$2.62
Product Variant Information section