text.skipToContent text.skipToNavigation

Manufacturer Part #

IPD042P03L3GATMA1

Single P-Channel 30 V 4.2 mOhm 131 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 150|W
Qg Gate Charge: 131nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
1
Multiple Of:
2500
Total
$1.53
USD
Quantity
Web Price
1
$1.53
50
$1.12
100
$1.06
250
$0.99
500+
$0.94
Product Variant Information section