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Manufacturer Part #

IPD60N10S4L12ATMA1

IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 94W
Qg Gate Charge: 38nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 60A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 20ns
Rise Time: 3ns
Fall Time: 21ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 2440pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
2,500
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,212.50
USD
Quantity
Web Price
2,500+
$0.485